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| BDY57 - BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 @ TC = 25 BDY57 BDY58 BDY57 BDY58 Value 80 125 120 160 10 25 6 Unit V V V A A Watts 175 -65 to +200 C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDY57 BDY58 Value 1 Unit C/W COMSET SEMICONDUCTORS 1/3 BDY57 - BDY58 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO(SUS) Ratings Collector-Emitter Breakdown Voltage (*) Collector-Emitter saturation Voltage (*) Test Condition(s) IC=100 mA, IB=0 Min Typ Mx Unit 80 125 0.5 1.4 V BDY57 BDY58 BDY57 BDY58 BDY57 VCE(SAT) IC=10 A, IB=1.0 A V 120 160 - V - V(BR)CBO Collector-Base Breakdown Voltage (*) IC=5.0mA, IE=0 BDY58 V(BR)EBO Emitter-Base Breakdown Voltage (*) IE=5.0 A, IC=0 BDY57 BDY58 - 0.5 1.4 V ICBO Collector-Base Cutoff Current Collector-Emitter Cutoff Current VCB=120 V IE=0 V VCE=80 V RBE=10 TCASE=100C V =10 V BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 1.0 0.5 0.5 10 mA mA ICER IEBO Emitter-Base Cutoff Current I EB V C=0 20 10 0.25 15 - 0.5 60 - mA VCE=4 V, IC=10 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=20 A VCE=4 V, IC=10 A, TCASE=30C V fT Transition Frequency VCE=15 V, IC=1.0 A, f=10 MHz 10 30 - MHz td + tr Turn-on time IC=15 A, IB=1.5 A - 0.25 1 s COMSET SEMICONDUCTORS 2/3 BDY57 - BDY58 Symbol ts + tf Ratings Turn-off time IC=15 A, IB1=1.5 A, IB2=-1.5 A Test Condition(s) BDY57 BDY58 Min Typ Mx Unit 1 2 s (*) Pulse Width 300 s, Duty Cycle 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm inches 25,45 1 38,8 1,52 30,09 1,184 17,11 0,67 9,78 0,38 11,09 0,43 8,33 0,32 1,62 0,06 19,43 0,76 1 0,04 4,08 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 3/3 |
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